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Abstract The development of high‐quality diamond films is pivotal for driving advances in quantum technology, power electronics, and thermal management. The ion implantation and lift‐off technique has emerged as a crucial method for fabricating diamond films with controlled thickness and scalable production of large‐area diamond wafers. This study advances the understanding of critical interface dynamics during diamond epilayer growth on ion‐implanted commercial diamond substrates. Leveraging high‐resolution cross‐sectional electron microscopy and spectroscopic analyses, the direct transformation of the damaged diamond layer is revealed into a graphitic layer during epilayer overgrowth, eliminating the need for high‐temperature annealing. Raman and photoluminescence spectroscopy mappings along the side section highlight the exceptional quality and purity of the epilayer, showcasing nitrogen‐vacancy center densities comparable to electronic‐grade diamond, making it highly suitable for quantum and electronic applications. Finally, the epilayer detaches efficiently via electrochemical etching, leaving a substrate with low surface roughness that is reusable for multiple growth cycles. These results provide valuable insights into refining the ion implantation and lift‐off process, bridging critical gaps in interface evolution, and establishing a foundation for sustainable, high‐performance diamond films across diverse technological applications. 

Color centers in wide bandgap semiconductors are attracting broad attention for use as platforms for quantum technologies relying on room-temperature single-photon emission (SPE), and for nanoscale metrology applications building on the centers’ response to electric and magnetic fields. Here, we demonstrate room-temperature SPE from defects in cubic boron nitride (cBN) nanocrystals, which we unambiguously assign to the cubic phase using spectrally resolved Raman imaging. These isolated spots show photoluminescence (PL) spectra with zero-phonon lines (ZPLs) within the visible region (496–700 nm) when subject to sub-bandgap laser excitation. Second-order autocorrelation of the emitted photons reveals antibunching withg²(0) ∼ 0.2, and a decay constant of 2.75 ns that is further confirmed through fluorescence lifetime measurements. The results presented herein prove the existence of optically addressable isolated quantum emitters originating from defects in cBN, making this material an interesting platform for opto-electronic devices and quantum applications. 

Abstract Egg waste is a major contributor to global food waste, accounting for 15% of discarded food in the United States. Typically, eggs have a shorter shelf life at room temperature and are preserved in refrigeration from production to consumption. However, maintaining constant refrigeration is energy‐intensive and expensive. Here, a bionanocomposite coating has been developed that incorporates each element of eggs – egg white, yolk, and eggshell – to increase the shelf life of fresh eggs without requiring further refrigeration. The quality of eggs has been successfully preserved for up to three weeks at room temperature. The coated eggs maintain the highest grade (AA) and exhibit improved Haugh Unit (HU), Yolk Index (YI), and pH compared to uncoated eggs. The coating reduces weight loss by ≈37% with an increase in HU (≈12.5%) and YI (≈13.9%). Morphological analysis reveals strong adhesion of the coating to the eggshell surface, showcasing promising barrier properties. The coating demonstrates an optimal combination of oxygen permeability (≈12.2 cm³ µm m⁻² d⁻¹ kPa⁻¹) and water vapor transmission (≈31.5 g mm m⁻²per day) with excellent antimicrobial properties. Overall, this approach of repurposing eggs into a high‐performance coating shows a promising viable alternative to refrigeration and a solution to combat egg waste. 

Abstract Piezoelectricity in low‐dimensional materials and metal–semiconductor junctions has attracted recent attention. Herein, a 2D in‐plane metal–semiconductor junction made of multilayer 2H and 1T′ phases of molybdenum(IV) telluride (MoTe₂) is investigated. Strong piezoelectric response is observed using piezoresponse force microscopy at the 2H–1T′ junction, despite that the multilayers of each individual phase are weakly piezoelectric. The experimental results and density functional theory calculations suggest that the amplified piezoelectric response observed at the junction is due to the charge transfer across the semiconducting and metallic junctions resulting in the formation of dipoles and excess charge density, allowing the engineering of piezoelectric response in atomically thin materials. 

Abstract Despite decades of research, metallic corrosion remains a long‐standing challenge in many engineering applications. Specifically, designing a material that can resist corrosion both in abiotic as well as biotic environments remains elusive. Here a lightweight sulfur–selenium (S–Se) alloy is designed with high stiffness and ductility that can serve as an excellent corrosion‐resistant coating with protection efficiency of ≈99.9% for steel in a wide range of diverse environments. S–Se coated mild steel shows a corrosion rate that is 6–7 orders of magnitude lower than bare metal in abiotic (simulated seawater and sodium sulfate solution) and biotic (sulfate‐reducing bacterial medium) environments. The coating is strongly adhesive, mechanically robust, and demonstrates excellent damage/deformation recovery properties, which provide the added advantage of significantly reducing the probability of a defect being generated and sustained in the coating, thus improving its longevity. The high corrosion resistance of the alloy is attributed in diverse environments to its semicrystalline, nonporous, antimicrobial, and viscoelastic nature with superior mechanical performance, enabling it to successfully block a variety of diffusing species.